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DZQA6V8AXV5
Maximum Ratings @T A = 25°C unless otherwise specified
Characteristic
Forward Voltage @ I F = 10mA
Symbol
V F
Value
0.9
Unit
V
Thermal Characteristics
Characteristic
Power Dissipation (Notes 4 & 5)
Peak Power Dissipation, 8x20 μ S Waveform (Note 6)
Thermal Resistance, Junction-to-Ambient (Note 4)
Operating and Storage Temperature Range
Symbol
P D
P pk
R θ JA
T J, T STG
Value
380
20
327
-55 to +150
Unit
mW
W
°C/W
° C
Electrical Characteristics @T A = 25°C unless otherwise specified
Type
Number
DZQA6V8AXV5
Marking
Code
T62
Breakdown Voltage
(Note 7)
V BR @ I T = 1mA
Min (V) Nom (V) Max (V)
6.47 6.8 7.14
Leakage Current
(Note 7)
I RM @ V RM
Max( μ A)
(V)
1 4.3
Clamping
Voltage
(Note 6)
V C Max @ I PP
V C (V) I PP (A)
13 1.6
Capacitance
@0V Bias(pF)
(Note 8)
C T
Typ Max
12.5 15
Capacitance
@3V Bias(pF)
(Note 8)
C T
Typ Max
7.6 9.5
Notes:
4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. Suggested Pad Layout Document AP02001,
which can be found on our website at http://www.diodes.com.
5. Only 1 diode under power. For all 4 diodes under power, P D will be 25% of the listed value.
6. Non-repetitive current pulse per Figure 3 and derate above T A = 25°C per Figure 1.
7. Short duration pulse test used to minimize self-heating effect.
8. Per element, f = 1MHz, T A = 25 ° C
100
100
75
50
50
25
0
0
25
50 75 100 125 150 175
T A , AMBIENT TEMPERATURE (°C)
Fig. 1 Pulse Derating Curve
200
0
0
20 40
t, TIME ( μ s)
Fig. 2 Pulse Waveform
60
DZQA6V8AXV5
Document number: DS31271 Rev. 6 - 2
2 of 4
February 2011
? Diodes Incorporated
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